DDR6 is already in the works, and it’s four times as fast as DDR4

DDR5 has barely hit the shelves, but Samsung has confirmed that it is already working on the next generation of RAM.

According to ComputerBase, the South Korean tech giant provided a glimpse of several next-generation memory standards including DDR6, GDDR6+, GDDR7, and HBM3 at its Tech Day 2021 event.

Loads of RAM.Image used with permission of the copyright holder

Samsung said its development of the DDR6 standard has begun and will be assisted by JEDEC, a semiconductor engineering organization with over 300 members, including some of the world’s largest computer companies.

The report mentions that the standard’s completion could materialize in 2024, but it’s more likely that 6th-gen DDR memory will arrive in either 2025 or 2026, given that DDR5 has only recently launched (and is already plagued by supply issues).

Regarding the technical specifications of the DDR6 memory, data transfer rates will be doubled compared to its predecessor. So it will be able to work at speeds of around 12,800 Mbps on JEDEC modules — that’s four times faster than DDR4 — while reaching 17,000 Mbps on overclocked modules.

As for the amount of memory channels per module, this will also be doubled for DDR6, with four 16-bit channels connected to 64 memory banks.

GDDR (graphics double data rate) is especially compatible with graphics cards and is an integral part of the GPU. Not to be confused with DDR RAM, which covers system memory.

Elsewhere, Samsung plans to make the GDDR6+ standard available before the inevitable launch of GDDR7. It will reportedly achieve speeds of up to 24Gbps, consequently allowing future 256-bit GPUs to have bandwidths of up to 768GB/s. Furthermore, GPUs with a 320/352/384 bit bus layout are said to achieve throughput in excess of 1TB/s.

Looking beyond the refinement of GDDR6, GDDR7 is expected to achieve transfer speeds of up to 32Gbps. Samsung is also said to include a real-time error protection feature in the standard. As Wccftech notes, GDDR7 memory will be able to deliver speeds of 1.5TB/s through a 384-bit bus interface and up to 2TB/s through a 512-bit system.

There is currently no timeline for when the GDDR7 standard will be finalized, so consumers will have to make do with GDDR6+ in the meantime.

Another next-generation memory standard that Samsung touched on was HBM3. The third generation of high-bandwidth memory will enter mass production during the second quarter of 2022. The company mentioned speeds of 800 Gbps for HBM3, which should power future CPUs and GPUs that will demand such high levels of memory performance. Samsung also emphasized the suitability of the technology for artificial intelligence applications.

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Categories: GAMING
Source: newstars.edu.vn

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